BFS17S - NPN Silicon RF Transistor

Infineon Technologies AG

Datasheet Details

Part number	BFS17S
Manufacturer	Infineon Technologies AG
File Size	513.05 KB
Description	NPN Silicon RF Transistor
Datasheet	BFS17S Datasheet
Additional preview pages of the BFS17S datasheet.

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NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • BFS17S: For orientation in reel see package information below • Pb-free (RoHS compliant) package BFS17S 4 5 6 3 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17S Marking Pin Configuration Package MCs 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, f = 10 MHz Total power dissipation1) TS ≤ 93 °C Junction temperature Ambient temperature Storage temperature VCEO VCBO VEBO IC ICM Ptot TJ TA TStg Value 15 25 2.5 25 50 280 150 -65 ... 150 -65 ...

Published: Mar 23, 2005 |