BFS17S
BFS17S is NPN Silicon RF Transistor manufactured by Infineon.
NPN Silicon RF Transistor
- For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
- BFS17S: For orientation in reel see package information below
- Pb-free (RoHS pliant) package
5 6
3 2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFS17S
Marking
Pin Configuration
Package
MCs 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, f = 10 MHz Total power dissipation1) TS ≤ 93 °C Junction temperature Ambient temperature Storage...