MAC97-4 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MAC97/D Silicon Bidirectional Triode Thyristors . . . designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO- 92 package which is readily adaptable for use in automatic insertion equipment. - One- Piece, Injection- Molded Unibloc Package - Sensitive Gate Triggering in Four Trigger Modes for all possible binations of Trigger Sources, and Especially for Circuits that Source Gate Drives - All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Gate Open, TJ = - 40 to +110°C)(1) 1/2 Sine Wave 50 to 60 Hz, Gate Open MAC97- 4, MAC97A4 MAC97- 6, MAC97A6 MAC97- 8, MAC97A8 On-State RMS Current Full Cycle Sine Wave 50 to 60 Hz (TC = +50°C) Peak Non- repetitive Surge Current (One Full Cycle, 60 Hz, TA = 110°C) Circuit Fusing Considerations TJ = - 40 to +110°C (t = 8.3 ms) Symbol VDRM Value Unit Volts MAC97,A IMPROVED SERIES (Device Date Code 9625 and Up) Motorola preferred devices TRIACs 0.8 AMPERE RMS 200 - 600 VOLTS 200 400 600 IT(RMS) ITSM I2t VGM 0.8 8.0 0.26 5.0 5.0 0.1 1.0 - 40 to +110 - 40 to +150 Amp Amps A2s Volts Watts Watt Amp °C °C MT1 MT2 G v 2.0 ms) Peak Gate Power (t v 2.0 ms) Peak Gate Voltage (t Peak Gate Current (t Average Gate Power (TC = 80°C, t v 2.0 ms) v 8.3 ms) PGM PG(AV) IGM TJ Tstg MT1 G MT2 Operating Junction Temperature Range Storage Temperature Range CASE 29- 04 TO- 226AA, STYLE 12 (TO- 92) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RθJC RθJA Max 75 200 Unit °C/W °C/W (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are...