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MBR5825 - POWER RECTIFIERS

Features

  • epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity-protection diodes.
  • Extremely Low vF.
  • High Surge Capacity.
  • Low Stored Charge, Majority.
  • TX Version Available.
  • Carrier Conduction Low Power Loss/ High Efficiency Designer's Data for ~'Worst Case" Conditions The Designers Data sheets permit the design of most.

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Full PDF Text Transcription

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® MOTOROLA IN5823,lN5824 IN5825 MBRS82S,H, H1 Designers Data Sheet HOT CARRIER POWER RECTIFIERS · .. employing the Schottky Barrier principle in a large area metal- to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity-protection diodes. • Extremely Low vF • High Surge Capacity • Low Stored Charge, Majority • TX Version Available • Carrier Conduction Low Power Loss/ High Efficiency Designer's Data for ~'Worst Case" Conditions The Designers Data sheets permit the design of most circuits entirely from the information presented.
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