epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.
Guardring for Stress Protection.
Matched dual die construction.
May be Paralleled for High Current Output.
High dv/dt Capability.
Very Low Forward Voltage Drop Mechanical Characteristics:.
Full PDF Text Transcription for MBRP20060 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MBRP20060. For precise diagrams, and layout, please refer to the original PDF.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRP20060CT/D ™ Data Sheet SWITCHMODE™ Designer's MBRP20060CT SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLTS...
View more extracted text
Designer's MBRP20060CT SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLTS Schottky Power Rectifier POWERTAP™ II Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.
MBRP20060 Datasheet
