200 Datasheet | Specifications & PDF Download

Global LCD Panel Exchange Center www.panelook.com PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BEG REPRODUCED OR COPI

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Unit: mm l Average Power Di

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a FEATURES 8-Bit ADC with 4.5 ␮ s Conversion Time On-Chip Track and Hold Operating Supply Range: +2.7 V to +5.5 V Specifications at +2.7 V – 3.6 V and

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KP200A (KP) L iu j in g re ct i f ie r c o . , L t d . / Electric speciality/limit value IT VDRM/VRRM IGTMax VGTMax ITSM IHMax dv/dt di/dt VTM size

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Model # LCFS1053 1100 to 2200 MHz Frequency Synthesizer Low Phase Noise in a Lower Cost Package Features • Low Phase Noise: -104 dBc/Hz (100 kHz offs

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R SCHOTTKY BARRIER DIODE HBR16200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 16（2×8）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI

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WT2003M03 Version: 1.01 Public Release Date: Dec. 2013 Catalogue Overview Feature Specification Pin Image Audio File Sequence and Memory with Power d

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CYBLE-222005-00 EZ-BLE Creator Module Not Recommended for New Designs EZ-BLE Creator Module General Description The Cypress CYBLE-222005-00 is a ful

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BAT854CW 40 V, 200 mA Schottky barrier dual diode 4 January 2023 Product data sheet 1. General description Planar Schottky barrier dual diode with a

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GBP2005 THRU GBP210 RoHS COMPLIANT Bridge Rectifiers Features ● UL recognition, file #E230084 ● Glass passivated chip junction ● Ideal for printed c

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RM5261™ Microprocessor with 64-Bit System Bus Data Sheet Released RM5261 RM5261™ Microprocessor with 64-Bit System Bus Data Sheet Proprietary and

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RN2001~RN2006 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2001,RN2002,RN2003 RN2004,RN2005,RN2006 Switching, Inverter Circuit, Inte

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D a t a S h e e t , R e v . 1 . 1 , M ay . 2 00 4 HYS64D64020[H/G]DL–5–B HYS64D64020[H/G]DL–6–B 200-Pin Small Outline Dual-In-Line Memory Modules SO-

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Zener Diodes MAZ8000 Series Silicon planar type Unit : mm For stabilization of power supply K A 0.625 I Features • Extremely low noise voltage caus

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TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm l High inp

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SB1040 THRU SB10200 SPECIFICATION 10A SCHOTTKY BARRIER RECTIFIERS Rev. A PRODUCT FEATURES 1. FLAMMABILITY CLASSIFICATION 94V-0 2. EXTREMELY LOW VF 3

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SB073P200-W-Ag/Al Schottky Barrier Diode Wafer 73 Mils, 200 Volt, 5 Amp Data Sheet Features Oxide Passivated Junction Low Forward Voltage 150 º C Jun

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1500W Surface Mount Transient Voltage Suppressor 1.5SMCJ6.8A-1.5SMCJ250CA 1500W Surface Mount Transient Voltage Suppressor Features • Low inductanc

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