200 Datasheet | Specifications & PDF Download

R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃）  、  APPLICATIONS  Low vol

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PT5618 200V Three-Phase Gate Driver DESCRIPTION The PT5618 is a high speed power MOSFET and IGBT driver with three independent high and low side refe

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U2008B Low-Cost Phase-Control IC with Soft Start Description The U2008B is designed as a phase-control circuit in bipolar technology. It enables load-

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Global LCD Panel Exchange Center www.panelook.com PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BEG REPRODUCED OR COPI

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STR2000 Series Switching Type Features q q q q q Requires only 3 external components Small size and high efficiency Low switching noise Variable outpu

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UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N120FQ

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www.DataSheet4U.com 2SA2005 Transistors For Audio Amplifier output - TV Velosity Modulation ( 160V, 1.5A) 2SA2005 Structure PNP Silicon Epitaxial Pl

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Features: (typical values) • Bandwidth …………………………………….….1.8-2.0 GHz. • Noise Figure …………………………………………… 0.9 dB. • Medium Gain ……………………………….………….28.5 dB.

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6MBP200RA060 IGBT-IPM R series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss

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TIGER Machine Translated by Google ELECTRONIC CO.,LTD Bipolar Circuit CS2003CP Seven-channel Darlington tube driver circuit 1. Overview CS2003CP i

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2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t

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NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 Features • High Current Capability: IC = 17 A • High Power Dissipation: 150 W • High Frequency: 30

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