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C5200 - Silicon NPN Transistor

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Datasheet Details

Part number C5200
Manufacturer Toshiba
File Size 179.69 KB
Description Silicon NPN Transistor
Datasheet download datasheet C5200 Datasheet
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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating Unit 230 V 230 V 5 V 15 A 1.5 A 150 W 150 °C −55 to 150 °C Electrical Characteristics (Tc = 25°C) http://www.DataSheet4U.net/ JEDEC ― JEITA ― TOSHIBA 2-21F1A Weight: 9.75 g (typ.
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