C5200 Datasheet - Toshiba

C5200 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage tempera.

C5200 Datasheet (179.69 KB)