C5200 Silicon NPN Transistor

Toshiba

Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm * High breakdown voltage: VCEO = 2.

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Datasheet Specifications

Part number: C5200
Manufacturer: Toshiba ↗
File Size: 179.69 KB
Datasheet: C5200_Toshiba.pdf
Description: Silicon NPN Transistor

Applications

* 2SC5200 Unit: mm
* High breakdown voltage: VCEO = 230 V (min)
* Complementary to 2SA1943
* Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base volt

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C5200 Silicon NPN Transistor Toshiba

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