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C5200 Datasheet - Toshiba

C5200 - Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage tempera.

C5200_Toshiba.pdf

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Datasheet Details

Part number:

C5200

Manufacturer:

Toshiba ↗

File Size:

179.69 KB

Description:

Silicon npn transistor.

C5200 Distributor

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