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2SC5200 - NPN TRANSISTOR

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Part number 2SC5200
Manufacturer Toshiba Semiconductor
File Size 202.78 KB
Description NPN TRANSISTOR
Datasheet download datasheet 2SC5200 Datasheet
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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 150 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-21F1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 9.
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