2SC5200 Datasheet Text
2SC5200
High power NPN epitaxial planar bipolar transistor
Preliminary data
Features
- High breakdown voltage VCEO = 230 V
- Typical fT = 30 MHz t(s)Application c- Audio power amplifier roduDescription PThis device is a NPN transistor manufactured teusing new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor
Obsolete Product(s)
- Obsoleshows good gain linearity behaviour.
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TO-264
Figure 1. Internal schematic diagram
Table 1. Device summary Order code 2SC5200
Marking 2SC5200
Package TO-264
Packaging Tube
September 2009
Doc ID 16310 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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Electrical ratings
1 Electrical ratings
2SC5200
Table 2....
