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2SC5200 - NPN Transistor

General Description

amplifier) technology.

Obsolete Product(s) - Obsoleshows good gain linearity behaviour.

Figure 1.

Key Features

  • High breakdown voltage VCEO = 230 V.
  • Typical fT = 30 MHz t(s).

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2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz t(s)Application c■ Audio power amplifier roduDescription PThis device is a NPN transistor manufactured teusing new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor Obsolete Product(s) - Obsoleshows good gain linearity behaviour. 1 23 TO-264 Figure 1. Internal schematic diagram Table 1. Device summary Order code 2SC5200 Marking 2SC5200 Package TO-264 Packaging Tube September 2009 Doc ID 16310 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/8 www.st.