| Part number | 2SC5200N |
|---|---|
| Datasheet | 2SC5200N-INCHANGE.pdf |
| File Size | 208.44 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC5200N | NPN Transistor | Toshiba |
 |
2SC5200 | NPN TRANSISTOR | Toshiba Semiconductor |
 |
2SC5200 | NPN EPITAXIAL SILICON TRANSISTOR | UTC |
 |
2SC5200 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
 |
2SC5200 | 150 Watt Silicon NPN Power Transistors | Thinki Semiconductor |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SC5200 | NPN Transistor |
| 2SC5200H | NPN Transistor |
| 2SC5239 | NPN Transistor |
| 2SC5242 | NPN Transistor |
| 2SC5244 | Silicon NPN Power Transistor |
| 2SC5248 | Silicon NPN Power Transistor |
| 2SC5249 | NPN Transistor |
| 2SC5250 | NPN Transistor |
| 2SC5271 | NPN Transistor |
| 2SC5280 | NPN Transistor |
