Datasheet Details
| Part number | 2SC5200N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.44 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5200N-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC5200N |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.44 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5200N-INCHANGE.pdf |
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·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type 2SA1943N ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5200N isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A;
IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 7A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5200N | NPN Transistor | Toshiba |
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2SC5200 | NPN TRANSISTOR | Toshiba Semiconductor |
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2SC5200 | NPN EPITAXIAL SILICON TRANSISTOR | UTC |
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2SC5200 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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2SC5200 | 150 Watt Silicon NPN Power Transistors | Thinki Semiconductor |
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