Datasheet Summary
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5201
High-Voltage Switching Applications
2SC5201
Unit: mm
- High breakdown voltage: VCEO = 600 V
- Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5...
- Part: C5201
- Description: 2SC5201
- Manufacturer: Toshiba
- Size: 142.10 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| C5200 | Silicon NPN Transistor |
| C5200N | NPN Transistor |
| C5232 | 2SC5232 |
| C5233 | 2SC5233 |
| C5254 | 2SC5254 |