| Part number | 2SC5200H |
|---|---|
| Download | 2SC5200H Datasheet (PDF) |
| File Size | 212.78 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SC5200 | NPN TRANSISTOR |
Unisonic Technologies |
2SC5200 | NPN EPITAXIAL SILICON TRANSISTOR |
Fairchild |
2SC5200 | NPN Epitaxial Silicon Transistor |
Thinki Semiconductor |
2SC5200 | 150 Watt Silicon NPN Power Transistors |
onsemi |
2SC5200 | NPN Transistor |
·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC5200H TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A;.
