2SC5200H
Overview
High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SC5200H
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 212.78 KB
Datasheets by Manufacturer
- 2SC5200 — Thinki Semiconductor — 150 Watt Silicon NPN Power Transistors
- 2SC5200B — JILIN SINO — Silicon NPN Transistor
- 2SC5200 — onsemi — NPN Transistor
- C5201 — Toshiba — 2SC5201
- 2SC5209 — Isahaya Electronics Corporation — SILICON NPN EPITAXIAL TYPE TRANSISTOR
- 2SC520A — Toshiba — SILICON NPN TRANSISTOR
- C520A — Unknown Manufacturer — 2SC520A
- 2SC5208 — Toshiba — Silicon NPN Transistor
- 2SC5209 — Kexin Semiconductor — Small Signal Transistor
- 2SC520A — Unknown Manufacturer — Silicon NPN Triple Diffused Mesa Transistor