Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- High Current Capability
- High Power Dissipation
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power amplifier applications
- Remend for 100W high fidelity audio frequency amplifier output stage...
