High Current Capability
High Power Dissipation
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Power amplifier applications
Recommend for 100W high fidelity
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.5
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC5200H
isc website：www.iscsemi.
2SC5200H Datasheet
