2SC520A - SILICON NPN TRANSISTOR

Toshiba

Download the 2SC520A datasheet PDF. This datasheet also covers the 2SC519A variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

. High Voltage : VCBO=130V(2SC519A) ,VCEO=110V(2SC519A).
High Collector Power Dissipation : P C=50W (Tc=25°C).

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2SC520A silicon npn transistor by Toshiba - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2SC519A-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2SC520A
Manufacturer	Toshiba
File Size	139.47 KB
Description	SILICON NPN TRANSISTOR
Datasheet	2SC520A Datasheet

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Other Datasheets by Toshiba

Part Number	Description
2SC5200N	NPN Transistor
2SC5208	Silicon NPN Transistor
2SC521A	SILICON NPN TRANSISTOR
2SC522	SILICON NPN TRANSISTOR
2SC524	SILICON NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SC519AI 2SC520A 2SC521AJ SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER, POWER SWITCHING APPLICATIONS. DC-DC CONVERTER, REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS unit in mm FEATURES . High Voltage : VCBO=130V(2SC519A) ,VCEO=110V(2SC519A) • High Collector Power Dissipation : P C=50W (Tc=25°C) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base 2SC519A Voltage 2SC520A 2SC521A CollectorEmitter Voltage 2SC519A 2SC520A 2SC521A SYMBOL 'CBO 'CEO RATING 130 100 70 110 80 50 UNIT 025.OMAX. 21.0MAZ. tX3 - 0.0 9 *1.0-0.03 Emitter-Base Voltage Collector Current Base Current VEBO Collector Power Dissipation Tc=25°C (Note) 50 25 Junction Temperature 150 Storage Temperature Range Tstg -65^150 Note Unit Mounted On a 300x300x2mmA£.