2SC5201
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
High-Voltage Switching Applications
Unit: mm
- High breakdown voltage: VCEO = 600 V
- Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 m A, IB = 0.5 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg
600 600
7 50 100 25 900 150
- 55 to 150
V V V m A m A m W °C °C
JEDEC JEITA
TO-92MOD ―
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5J1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 0.36 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the...
