• Part: MCM67M618B
  • Description: 64K x 18 Bit BurstRAM Synchronous Fast Static RAM
  • Manufacturer: Motorola Semiconductor
  • Size: 166.37 KB
Download MCM67M618B Datasheet PDF
Motorola Semiconductor
MCM67M618B
feature eliminates plex off- chip DQ16 write pulse generation and provides increased flexibility for ining DQ17 signals. Dual write enables (LW and UW) are provided to allow individually writeable bytes. LW controls DQ0 - DQ8 (the lower bits), while UW controls DQ9 - DQ17 (the upper bits). This device is ideally suited for systems that require wide data bus widths and cache memory. - - - - - - - - - - Single 5 V ± 5% Power Supply Fast Access Times: 9/10/12 ns Max Byte Writeable via Dual Write Strobes Internal Input Registers (Address, Data, Control) Internally Self- Timed Write Cycle TSP, TSC, and BAA Burst Control Pins Asynchronous Output Enable Controlled Three- State Outputs mon Data Inputs and Data Outputs High Board Density 52- PLCC Package 3.3 V I/O patible FN PACKAGE PLASTIC CASE 778- 02 PIN ASSIGNMENT A6 A7 E UW LW TSC TSP BAA K G A8 A9 A10 7 6 5 4 3 2 1 52 51 50 49 48 47 8 46 9 45 10 44 11 43 12 42 13 41 14 40 15 39 16 38 17 37 18 36 19 35 20 34 21 22 23 24 25 26 27 28 29 30 31...