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MFE121 - DUAL-GATE MOSFET VHF AMPLIFIER

Download the MFE121 datasheet PDF. This datasheet also covers the MFE120 variant, as both devices belong to the same dual-gate mosfet vhf amplifier family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MFE120-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MFE121 DUAL GATE MOSFETS Digitron Semiconductors
MFE120 DUAL GATE MOSFETS Digitron Semiconductors
MFE122 DUAL GATE MOSFETS Digitron Semiconductors
MFE140 DUAL GATE MOSFET Digitron Semiconductors
MFE209 N-Channel Dual Gate MOSFET New Jersey Semi-Conductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MFE120 DUAL-GATE MOSFET VHF AMPLIFIER
MFE122 DUAL-GATE MOSFET VHF AMPLIFIER
MFE130 Silicon N-Channel Dual Gate FET
MFE131 Silicon N-Channel Dual Gate FET
MFE132 Silicon N-Channel Dual Gate FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Drain-Source Voltage Drain Current @Total Device Dissipation T^ = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vDs id Pd TJ' Tstg Value + 25 30 300 1.7 -65 to +175 Unit Vdc mAdc mW mW/°C °C MFE120 MFE121 MFE122 CASE 20-03, STYLE 9 TO-72 (TO-206AF) DUAL-GATE MOSFET VHF AMPLIFIER —N-CHANNEL DEPLETION ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (ID = 100 jtAdc, Vs = 0, Vqis = -4.0 V, Vq2S = + 4.0 V) Gate 1 -Source Breakdown Voltage G(I 1 = ±10/iAdc, VG 2S = 0) Gate 2-Source Breakdown Voltage G2(l = ±10nAdc, VG 2S = 0) Gate 1 Leakage Current (VG1S = + 60 Vdc, VG2S = 0- VDS = 0) Gate 2 Leakage Current (VG2S = +6.0 Vdc, VG 1S = 0.