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MFE825 - MOSFET

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MFE825 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Drain Current @Total Device Dissipation T"a = 25°C Derate above 25°C Junction Temperature Range Operating and Storage Junction Temperature Range Symbol vDs Vgs id Pd Tj TJ- Tstg Value 20 30 25 200 1.6 150 - 65 to + 1 50 Unit Vdc Vdc mA mW mW/°C °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. OFF CHARACTERISTICS Characteristic Drain-Source Breakdown Voltage (ID =1.0 /iA, Vqs = -8.0 V) Gate Reverse Current (Vgs = -iov,vDS V) Gate Source Voltage dp = 1.0 mA, VDS = 2.0 V) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (Vps = io v, vG s = o) SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance (VpS = 10 V, VGS = 0, f = 1.