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MMBR2857 - NPN SILICON RF TRANSISTOR

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MMBR2857 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) RF TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCBO v EBO 'C THERMAL CHARACTERISTICS Characteristic *Total Device Dissipation, Ta = 25°C Derate above 25°C Symbol PD Storage Temperature Tstq •Thermal Resistance Junction to Ambient Rsja "Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage dC = 3.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC = 1.