MMBT2369ALT1 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT2369LT1/D Switching Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT2369LT1 MMBT2369ALT1- - Motorola Preferred Device MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCES VCBO VEBO IC Value 15 40 40 4.5 200 2 EMITTER Unit Vdc Vdc Vdc Vdc m Adc 1 2 CASE 318 - 08, STYLE 6 SOT- 23 (TO - 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Rq JA PD 556 300 2.4 Rq JA TJ, Tstg 417 - 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C DEVICE MARKING MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector...