The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol
V CES vCBO v EBO
c
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, Ta = 25°C
Derate above 25°C
PD
Storage Temperature
Tstq
•Thermal Resistance Junction to Ambient
R&JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value 30 30 10 500
Max
350 2.8 150 357
Unit Vdc Vdc Vdc
mAdc
Unit
mW
mW/X
°C °c/w
MMBTA63 MMBTA64
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
DARLINGTON TRANSISTOR
PNP SILICON
Refer to MPSA75 for graphs.
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
MMBTA63 Datasheet
