Galaxy Century Microelectronics MMBTA63
PNP Darlington Amplifier Transistor
FEATURES
● Epitaxial planar die construction.● Complementary NPN type available (MMBTA13/MMBTA14).
● High current gain. Pb Lead-free MMBTA63/MMBTA64
APPLICATIONS
● Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking MMBTA63 MMBTA64 2U 2V SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO collector-base voltage MMBTA63 MMBTA64 VCEO collector-emitter voltage MMBTA63 MMBTA64 VEBO emitter-base voltage IC collector current (DC) PC Collector dissipation RθJA Thermal Resistance, Junction to Ambient Tj ,Tstg junction and storage temperature Value -30 -30 -30 -30 -10 -0.5 0.3 417 -55 to +150 UNIT V V V A W °C/W °C C124 Rev.A 1 Production specification PNP Darlington Amplifier Transistor MMBTA63/MMBTA64ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Symbol Param