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MMBTA63 - PNP Darlington Amplifier Transistor

Key Features

  • Epitaxial planar die construction.
  • Complementary NPN type available (MMBTA13/MMBTA14).
  • High current gain. Pb Lead-free MMBTA63/MMBTA64.

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Other Datasheets by Galaxy Microelectronics

Part Number Description
MMBTA64 PNP Darlington Amplifier Transistor
MMBTA05 NPN General Purpose Transistor
MMBTA06 NPN General Purpose Transistor
MMBTA13 NPN Darlington Amplifier Transistor
MMBTA14 NPN Darlington Amplifier Transistor

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Production specification PNP Darlington Amplifier Transistor FEATURES  Epitaxial planar die construction.  Complementary NPN type available (MMBTA13/MMBTA14).  High current gain. Pb Lead-free MMBTA63/MMBTA64 APPLICATIONS  Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking MMBTA63 MMBTA64 2U 2V SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO collector-base voltage MMBTA63 MMBTA64 VCEO collector-emitter voltage MMBTA63 MMBTA64 VEBO emitter-base voltage IC collector current (DC) PC Collector dissipation RθJA Thermal Resistance, Junction to Ambient Tj ,Tstg junction and storage temperature Value -30 -30 -30 -30 -10 -0.5 0.