| Part Number | MMBTA63 Datasheet |
|---|---|
| Manufacturer | Galaxy Microelectronics |
| Overview |
Production specification
PNP Darlington Amplifier Transistor
FEATURES
Epitaxial planar die construction. Complementary NPN type available
(MMBTA13/MMBTA14). High current gain.
Pb
Lead-free
M.
* Epitaxial planar die construction. * Complementary NPN type available (MMBTA13/MMBTA14). * High current gain. Pb Lead-free MMBTA63/MMBTA64 APPLICATIONS * Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking MMBTA63 MMBTA64 2U 2V SOT-23 Package Code SOT. |
MMBTA63 Datasheet and Specifications PDF
The MMBTA63 is a PNP Darlington Amplifier Transistor.
Key Specifications
| Package | SOT-23 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 1 mm |
| Length | 3.05 mm |
| Width | 1.4 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | MMBTA63 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | SEMTECH |
| Overview | MMBTA63 / MMBTA64 PNP Silicon Epitaxial Planar Transistor for general purpose application, darlington transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base. at) -VBE(on) fT Min. 5000 10000 10000 20000 - - 30 - - 125 Max. - 100 100 - 1.5 2 - Unit - nA nA V V V MHz SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 MMBTA63 / MMBTA64 SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 . |
| Part Number | MMBTA63 Datasheet |
|---|---|
| Description | PNP TRANSISTOR |
| Manufacturer | Diodes Incorporated |
| Overview |
Features
Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Current Gain Complementary NPN Type: MMBTA13 /MMBTA14 Totally Lead-Free & Fully RoHS Compliant.
* Epitaxial Planar Die Construction * Ideal for Low Power Amplification and Switching * High Current Gain * Complementary NPN Type: MMBTA13 /MMBTA14 * Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) * Halogen and Antimony Free. “Green” Device (Note 3) * Qualified to AEC-Q101 Standards for Hig. |
| Part Number | MMBTA63 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | MPSA63 / MMBTA63 / PZTA63 Discrete POWER & Signal Technologies MPSA63 MMBTA63 C PZTA63 C E C B E C B TO-92 E SOT-23 Mark: 2U B SOT-223 PNP Darlington Transistor This device is designed for . RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA63 625 5.0 83.3 200 Max *MMBTA63 350 2.8 357 **PZTA63 1,000 8.0 125 Units mW mW/°C °C/W °C/W *Device mounted on F. |