KEC MMBTA63
EPITAXIAL PLANAR PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current V(BR)CES ICBO IEBO IC=-0.1mA, IB=0 VCB=-30V, IE=0 VEB=-10V, IC=0 DC Current Gain MMBTA63 MMBTA64 MMBTA63 MMBTA64 hFE(1) IC=-10mA, VCE=-5V hFE(2) IC=-100mA, VCE=-5V Collector-Emitter Saturation Voltage Base Emitter Voltage MMBTA63/64 MMBTA63/64 VCE(sat) VBE Current Gain Bandwith Product MMBTA63/64 fT *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% IC=-100mA, IB=-0.1mA IC=-100mA, VCE=-5V IC=-10mA, f=100MHz VCE=-5V MARK SPEC TYPE MARK MMBTA63 AGX MMBTA64 AFX Marking A XType Name MIN. -30 5,000 10,000 10,000 20,000 - TYP. - - MAX. - -0.1 -0.1 - -1.5 UNIT V A A V - - -2.0 V 125 - - MHz Lot No. 2008. 8. 29 Revision No : 5 1/2 DC CURRENT GAIN hFE MMBTA63/64 1M 300k 100k 30k 10k 3k 1k -1 h FE - I C VCE =-5V -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) -1k CURRENT GAIN BANDWIDTH PRODUCT f T (MHz) 1k 300 100 30 10 3 1 -1 fT - IC VCE =-...