* ected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed
MMSF5N03HD Datasheet (294.80 KB)
MMSF5N03HD
Motorola
294.80 KB
Single tmos power mosfet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSF5N03HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMSF5N03HD.
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