Full PDF Text Transcription for MPSA18 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MPSA18. For precise diagrams, and layout, please refer to the original PDF.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage C...
View more extracted text
MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 45 Vdc 45 Vdc 6.5 Vdc 200 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction to Ambient RqJA(1) 200 Thermal Resistance, Junction to Case RqJC 83.