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MRF183 - LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Features

  • 62 58 54 51 47 44 41 38 37 33 30 28 26 24 21 19 17 14 12 9 9 8 6 4 |S12| 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.016 0.016 0.015 0.015 0.014 0.014 0.013 0.013 0.012 0.011 0.011 0.012 0.012 0.012 0.010 0.009 0.008 0.007 0.007 0.007 0.006 0.006 0.006 0.006 0.005 0.004 0.004 S12 ∠φ 11 8 4 3 2 0.
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF183/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Volts Output Power – 45 Watts PEP Power Gain – 11.
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