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MRF19045LR3 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Description

0.120″ x 0.333″ x 0.100″, Surface Mount Ferrite Beads, Fair Rite #2743019446 10 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T495X106K035AS4394 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 24 pF Chip Capacitors, B Case, ATC #100B240JP500X 470 pF Chip Capacitor, B Case, ATC #100B471JP200X

Features

  • FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF) 0 1 2 3 4 5 6 7 8 9 10 11 12 13.5 Pout, OUTPUT POWER (WATTS) (Avg. 2.
  • Carrier N.
  • CDMA) Figure 7. 2-Carrier N-CDMA Power Gain versus Output Power Figure 8. CW Output Power, Power Gain and Drain Efficiency versus Input Power.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF19045/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from www.datasheet4u.com 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier N - Channel Enhancement - Mode Lateral MOSFETs applications. • Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA Multi - carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 9.5 Watts Avg. Power Gain — 14.9 dB Efficiency — 23.
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