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MRF19085R3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF19085R3, a member of the MRF19085LR3 RF Power Field Effect Transistors family.

Description

Short Ferrite Bead 51 pF Chip Capacitor 5.1 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 µF Chip Capacitors 0.1 µF Tantalum Surface Mount Capacitor 10 pF Chip Capacitor 10 µF Tantalum Surface Mount Capacitor 22 µF Tantalum Surface Mount Capacitors 1 Turn, 20 AWG, 0.100″ ID Type N Flange Mounts 1.0

Features

  • gure 5. Intermodulation Distortion Products versus Output Power IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) 24 η 22 20 18 16 14 12 1930 1940 1950 1960 1970 f,.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF19085/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from www.datasheet4u.com 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier N - Channel Enhancement - Mode Lateral MOSFETs applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts, IDQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.
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