MRF19125 RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub *Micron MOSFET Line www.DataSheet4U.com RF Power Field E.
Short Ferrite Bead, Fair Rite #2743019447 51 pF Chip Capacitor, ATC #100B510JCA500X 5.

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Datasheet Specifications

Part number: MRF19125
Manufacturer: Motorola
File Size: 402.21 KB
Datasheet: MRF19125_Motorola.pdf
Description: RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

Features

* = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 4 10 Pout, OUTPUT POWER (WATTS) PEP 100 150 12.5 IMD Gps -30 -35 1990 2000 12 1920 1930 1940 1950 1960 1970 1980 f, FREQUENCY (MHz) Figure 9. Two-Tone Power Gain versus Output Power Figure 10. Two-Tone Broadband Performance IMD, INTERMODULATIO

Applications

* with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
* Typical 2
* Carrier N
* CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS
* 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through

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MRF19125 Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs Motorola

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