MRF19125S mosfets equivalent, rf sub-micron mosfet line n-channel enhancement-mode lateral mosfets.
Pout = 125 W (PEP) IDQ = 1300 mA 100 kHz Tone Spacing
-20 -25
900 mA VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 4 10 Pout, OUTPUT POWER (WATTS) PEP 100 150
12.5
.
with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
* Typical 2
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