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MRF237 - HIGH FREQUENCY TRANSISTOR

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tq = 25°C Derate above 25°C Storage Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol v CEO v CBO VEBO •c PD Tstg Value 18 36 4.0 640 8.0 45.7 - 65 to + 200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C Symbol Rajc Max ' 20 Unit °C/W MRF237 CASE 79-03, STYLE 5 HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 10 mAdc, Bl = 0) Collector-Emitter Breakdown Voltage c(l = 5.0 mAdc, Vbe = 0) Emitter-Base Breakdown Voltage (IE = 1.
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