MRF281SR1 Overview
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in mercial and industrial applications.
MRF281SR1 Key Features
- Excellent Thermal Stability
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- S--Parameter Characterization at High Bias Levels
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel