Datasheet Summary
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in mercial and industrial applications.
- Specified Two--Tone Performance @ 1930 MHz, 26 Volts
Output Power
- 4 Watts PEP Power Gain
- 11 dB Efficiency
- 30% Intermodulation Distortion
- --29 dBc
- Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power Features
- Excellent Thermal Stability
- Characterized with Series Equivalent...