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MRF282S - LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Key Features

  • rder 7th Order.
  • 70 0.1 1.0 Pout, OUTPUT POWER (WATTS) PEP 10 12 Gps.
  • 20 11.
  • 25 10 Pout = 10 W (PEP) IDQ = 75 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 18 20 22 24 VDD, DRAIN SUPPLY.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF282/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.