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MRF282ZR1 - RF Power Field Effect Transistors

Download the MRF282ZR1 datasheet PDF. This datasheet also covers the MRF282SR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • RoHS Compliant.
  • Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Table 1. Maximum Ratings Rati.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF282SR1-NXP.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts PEP Power Gain — 10.5 dB Efficiency — 28% Intermodulation Distortion — --31 dBc • Specified Single--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts CW Power Gain — 9.