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MRF282ZR1 Datasheet Rf Power Field Effect Transistors

Manufacturer: NXP Semiconductors

Overview: ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts PEP Power Gain — 10.5 dB Efficiency — 28% Intermodulation Distortion — --31 dBc • Specified Single--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts CW Power Gain — 9.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • RoHS Compliant.
  • Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Table 1. Maximum Ratings Rati.

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