MRF282ZR1 Overview
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: 15, 5/2006 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
MRF282ZR1 Key Features
- Excellent Thermal Stability
- Characterized with Series Equivalent Large--Signal
- RoHS pliant
- Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel