MRF21060LR3
MRF21060LR3 is RF Power Field Effect Transistors manufactured by NXP Semiconductors.
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2100 to 2200 MHz. Suitable for W
- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.
- Typical 2
- Carrier W PMo Hutz,=P6AWR a=tt8s.A5 vdg B.,
- CFu Dl Ml FAre Pqeurefonrcmya Bnacned:,VCDh Da=nn2e8l @ 0.01% Probability on CCDF.
VBoalntsd,w IDid Qth==530.084m A,
Power Gain
- 12.5 d B
Drain Efficiency
- 15%
ACPR @ 5 MHz Offset
- - 47 d Bc in 3.84 MHz Channel Bandwidth
- Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW Output Power
Features
- Internally Matched for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Excellent Thermal Stability
- Characterized with Series Equivalent Large
- Signal Impedance...
