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MRF21060LR3 - RF Power Field Effect Transistors

Key Features

  • Internally Matched for Ease of Use.
  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.

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📁 Similar Datasheet

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MRF21010LR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Motorola
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2 - Carrier W PMoHutz,=P6AWR a=tt8s.A5 vdgB., - CFuDlMl FArePqeurefonrcmyaBnacned:,VCDhDa=nn2e8l @ 0.01% Probability on CCDF. VBoalntsd,wIDidQth==530.084mA, Power Gain — 12.5 dB Drain Efficiency — 15% ACPR @ 5 MHz Offset — - 47 dBc in 3.