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MRF21060R3 - RF Power Field Effect Transistors

Key Features

  • 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF B 2 K D bbb M T A M B M M (.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21060/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W - CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offset @ 4.096 MHz BW, 15 DTCH Output Power — 6.0 Watts Power Gain — 12.5 dB Drain Efficiency — 15% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.