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MRF21060SR3 - RF Power Field Effect Transistors

Download the MRF21060SR3 datasheet PDF. This datasheet also covers the MRF21060R3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF B 2 K D bbb M T A M B M M (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF21060R3_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF21060LR3 RF Power Field Effect Transistors NXP
MRF21060LSR3 RF Power Field Effect Transistors NXP
MRF21010LR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF21010LSR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF21120R6 RF Power Field Effect Transistor Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF21060R3 RF Power Field Effect Transistors
MRF21010LR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF21010LSR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF21030LR3 RF Power Field Effect Transistors
MRF21030LSR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21060/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W - CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offset @ 4.096 MHz BW, 15 DTCH Output Power — 6.0 Watts Power Gain — 12.5 dB Drain Efficiency — 15% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.