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MRF21060LSR3 - RF Power Field Effect Transistors

Download the MRF21060LSR3 datasheet PDF. This datasheet also covers the MRF21060LR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Internally Matched for Ease of Use.
  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF21060LR3-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF21060R3 RF Power Field Effect Transistors Motorola
MRF21060SR3 RF Power Field Effect Transistors Motorola
MRF21010LR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF21010LR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Motorola
MRF21010LSR1 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description
MRF21060LR3 RF Power Field Effect Transistors
MRF24300N RF Power LDMOS Transistor
MRF24G300H RF Power GaN Transistors
MRF24G300HS RF Power GaN Transistors
MRF282SR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2 - Carrier W PMoHutz,=P6AWR a=tt8s.A5 vdgB., - CFuDlMl FArePqeurefonrcmyaBnacned:,VCDhDa=nn2e8l @ 0.01% Probability on CCDF. VBoalntsd,wIDidQth==530.084mA, Power Gain — 12.5 dB Drain Efficiency — 15% ACPR @ 5 MHz Offset — - 47 dBc in 3.