Part MRF21060LSR3
Description RF Power Field Effect Transistors
Category Transistor
Manufacturer NXP Semiconductors
Size 393.81 KB
NXP Semiconductors

MRF21060LSR3 Overview

Key Features

  • Internally Matched for Ease of Use
  • High Gain, High Efficiency and High Linearity
  • Integrated ESD Protection
  • Designed for Maximum Gain and Insertion Phase Flatness
  • Excellent Thermal Stability
  • Characterized with Series Equivalent Large
  • Signal Impedance Parameters