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MRF24300N - RF Power LDMOS Transistor

Key Features

  • Characterized with series equivalent large--signal impedance parameters.
  • Internally matched for ease of use.
  • Qualified for operation at 32 Vdc.
  • Integrated ESD prote.

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Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 300 W CW transistor is designed for industrial, scientific, medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse and linear applications. This high gain, high efficiency device is targeted to replace industrial magnetrons and will provide longer life and ease of use. Typical Performance: In 2400–2500 MHz reference circuit, VDD = 32 Vdc Frequency Pin Gps ηD Pout (MHz) Signal Type (W) (dB) (%) (W) 2450 CW 15.9 13.1 60.5 320 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin Test (W) Voltage Result 2450 (1) CW > 5:1 at all Phase Angles 1. Measured in 2450 MHz reference circuit. 15.