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MRF24G300HS - RF Power GaN Transistors

Key Features

  • Advanced GaN on SiC, for optimal thermal performance.
  • Characterized for CW, long pulse (up to several seconds) and short pulse operations.
  • Device can be used in a single--ended or push--pull configuration.
  • Input matched for simplified input circuitry.
  • Qualified up to 55 V.
  • Suitable for linear.

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NXP Semiconductors Technical Data RF Power GaN Transistors These 300 W CW GaN transistors are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments. These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when these parts are used in applications designed outside of these frequencies.