MRF24G300HS
MRF24G300HS is RF Power GaN Transistors manufactured by NXP Semiconductors.
NXP Semiconductors Technical Data
RF Power Ga N Transistors
These 300 W CW Ga N transistors are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in
CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments.
These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when these parts are used in applications designed outside of these frequencies.
Typical Performance: In 2400- 2500 MHz MRF24G300HS reference circuit,
VDD = 48 Vdc, VGS(A+B) =
- 5 Vdc (1)
Frequency (MHz)
Signal Type
Pin (W)
Pout (W)
Gps (d B)
D (%)
CW 10.0 336 15.3 70.4
10.0 332 15.2 73.0
10.0 307 14.9 74.4
1. All data measured in fixture with device soldered to heatsink.
Load Mismatch/Ruggedness
Frequency
Signal
Pin Test
(MHz)
Type
VSWR
(W)
Voltage
Pulse (100 sec, 20% Duty
Cycle)
> 20:1 at All...
