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MRF24G300H - RF Power GaN Transistors

Download the MRF24G300H datasheet PDF. This datasheet also covers the MRF24G300HS variant, as both devices belong to the same rf power gan transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Advanced GaN on SiC, for optimal thermal performance.
  • Characterized for CW, long pulse (up to several seconds) and short pulse operations.
  • Device can be used in a single--ended or push--pull configuration.
  • Input matched for simplified input circuitry.
  • Qualified up to 55 V.
  • Suitable for linear.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF24G300HS-NXP.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NXP Semiconductors

Part Number Description
MRF24G300HS RF Power GaN Transistors
MRF24300N RF Power LDMOS Transistor
MRF21060LR3 RF Power Field Effect Transistors
MRF21060LSR3 RF Power Field Effect Transistors
MRF282SR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NXP Semiconductors Technical Data RF Power GaN Transistors These 300 W CW GaN transistors are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments. These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when these parts are used in applications designed outside of these frequencies.