MRF282SR1
MRF282SR1 is RF Power Field Effect Transistors manufactured by NXP Semiconductors.
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
Document Number: MRF282 Rev. 15, 5/2006
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
- Specified Two--Tone Performance @ 2000 MHz, 26 Volts Output Power
- 10 Watts PEP Power Gain
- 10.5 d B Efficiency
- 28% Intermodulation Distortion
- --31 d Bc
- Specified Single--Tone Performance @ 2000 MHz, 26 Volts Output Power
- 10 Watts CW Power Gain
- 9.5 d B Efficiency
- 35%
- Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts CW Output Power
Features
- Excellent Thermal Stability
- Characterized with Series Equivalent Large--Signal
Impedance Parameters
- Ro HS pliant
- Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
Table 1. Maximum...
