Datasheet Details
| Part number | MRF282SR1 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 545.73 KB |
| Description | RF Power Field Effect Transistors |
| Datasheet | MRF282SR1-NXP.pdf |
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Overview: ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts PEP Power Gain — 10.5 dB Efficiency — 28% Intermodulation Distortion — --31 dBc • Specified Single--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts CW Power Gain — 9.
| Part number | MRF282SR1 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 545.73 KB |
| Description | RF Power Field Effect Transistors |
| Datasheet | MRF282SR1-NXP.pdf |
|
|
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|---|---|
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