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MRF284 - RF Power Field-Effect Transistors

Key Features

  • 0 13 IDQ = 400 mA G pe , POWER GAIN (dB) 12 300 mA.
  • 30 200 mA 11 10 9 100 mA 8 0.1 VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion versus Output Power Figure 8. Power.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF284/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and wireless local loop. • Specified Two–Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts (PEP) Power Gain = 9 dB Efficiency = 30% Intermodulation Distortion = –29 dBc • Typical Single–Tone Performance at 2000 MHz, 26 Volts Output Power = 30 Watts (CW) Power Gain = 9.