MRF284LSR1

MRF284LSR1 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.

MRF284LSR1 Datasheet

Part number	MRF284LSR1
Download	MRF284LSR1 Datasheet (PDF)
File Size	412.47 KB
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors

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MRF284LSR1 Distributor

MRF284LSR1 Description

Freescale Semiconductor Technical Data Document Number: 17, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MRF284LSR1 Key Features

Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal
RoHS pliant
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings
Source Voltage Gate
Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperatu
CHANNEL BROADBAND RF POWER MOSFETs
05, STYLE 1 NI

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