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MRF282Z - LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Download the MRF282Z datasheet PDF. This datasheet also covers the MRF282S variant, as both devices belong to the same lateral n-channel broadband rf power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • rder 7th Order.
  • 70 0.1 1.0 Pout, OUTPUT POWER (WATTS) PEP 10 12 Gps.
  • 20 11.
  • 25 10 Pout = 10 W (PEP) IDQ = 75 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 18 20 22 24 VDD, DRAIN SUPPLY.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF282S_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF282ZR1 RF Power Field Effect Transistors NXP
MRF282SR1 RF Power Field Effect Transistors NXP
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MRF284LSR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF2001 Microwave Power Transistors Motorola Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF282S LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF281SR1 RF POWER FIELD EFFECT TRANSISTORS
MRF281ZR1 RF POWER FIELD EFFECT TRANSISTORS
MRF284 RF Power Field-Effect Transistors
MRF284S RF Power Field-Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF282/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.