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MRF281SR1 - RF POWER FIELD EFFECT TRANSISTORS

Key Features

  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • S--Parameter Characterization at High Bias Levels.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Document Number: MRF281 Rev. 6, 10/2008 MRF281SR1 MRF281ZR1 1930--1990 MHz, 4 W, 26 V.

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📁 Similar Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF281ZR1 RF POWER FIELD EFFECT TRANSISTORS
MRF282S LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
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MRF284S RF Power Field-Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications.