Datasheet4U.com

MRF281ZR1 - RF POWER FIELD EFFECT TRANSISTORS

This page provides the datasheet information for the MRF281ZR1, a member of the MRF281SR1 RF POWER FIELD EFFECT TRANSISTORS family.

Product Overview

Motorola

📥 Download Datasheet

MRF281ZR1 RF POWER FIELD EFFECT TRANSISTORS by Motorola - Datasheet Preview — Datasheet preview – MRF281ZR1

Datasheet Details

Part number	MRF281ZR1
Manufacturer	Motorola
File Size	410.00 KB
Description	RF POWER FIELD EFFECT TRANSISTORS
Datasheet	MRF281ZR1 Datasheet
Additional preview pages of the MRF281ZR1 datasheet.

MRF281ZR1 Product details

Features

Excellent Thermal Stability.
Characterized with Series Equivalent Large--Signal Impedance Parameters.
S--Parameter Characterization at High Bias Levels.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Document Number: MRF281 Rev. 6, 10/2008 MRF281SR1 MRF281ZR1 1930--1990 MHz, 4 W, 26 V.

📁 Similar Datasheet

MRF282SR1 - RF Power Field Effect Transistors (NXP)
MRF282ZR1 - RF Power Field Effect Transistors (NXP)
MRF284LR1 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF284LSR1 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF2001 - Microwave Power Transistors (Motorola Semiconductor)
MRF2001B - Microwave Power Transistors (Motorola Semiconductor)
MRF2001M - Microwave Power Transistors (Motorola Semiconductor)
MRF206 - Half-Inch Diameter Process Sealed Rotaries (NKK)
MRF21010LR1 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF21010LSR1 - RF Power Field Effect Transistors (Freescale Semiconductor)

Other Datasheets by Motorola

MRF281SR1 - RF POWER FIELD EFFECT TRANSISTORS
MRF282S - LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF282Z - LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF284 - RF Power Field-Effect Transistors
MRF284S - RF Power Field-Effect Transistors
MRF286 - The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
MRF286S - The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
MRF20030 - RF POWER TRANSISTOR

Published: Dec 10, 2007 |