MRF282S mosfets equivalent, lateral n-channel broadband rf power mosfets.
DISTORTION (dBc)
G ps , GAIN (dB)
VDD = 26 Vdc I = 75 mA
– 20 DQ f1 = 2000.0 MHz f2 = 2000.1 MHz
– 30
– 40 3rd Order 5th.
at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
* Specified Two.
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