MRF421 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF421/D The RF Line NPN Silicon RF Power Transistor Designed primarily for application as a high- power linear amplifier from 2.0 to 30 MHz. - Specified 12.5 Volt, 30 MHz Characteristics - Output Power = 100 W (PEP) Minimum Gain = 10 d B Efficiency = 40% - Intermodulation Distortion @ 100 W (PEP) - IMD = - 30 d B (Min) .. - 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR 100 W (PEP), 30 MHz RF POWER TRANSISTORS NPN SILICON CASE 211- 11, STYLE 1 MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current - Continuous Withstand Current - 10 s Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC - PD Tstg Value 20 45 3.0 20 30 290 1.66 - 65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.6 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage (IC = 50 m Adc, IB = 0) Collector- Emitter Breakdown Voltage (IC = 200 m Adc, VBE = 0) Collector- Base Breakdown Voltage (IC = 200 m Adc, IE = 0) Emitter- Base Breakdown Voltage (IE = 10 m Adc, IC = 0) Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, TC = 25°C) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES 20 45 45 3.0 - - - - - - - - - - 10 Vdc Vdc Vdc Vdc m Adc (continued) REV 1 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997 MRF421 1 ELECTRICAL CHARACTERISTICS - continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) h FE 10...