Datasheet Summary
SEMICONDUCTOR TECHNICAL DATA
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The RF Line
NPN Silicon RF Power Transistor
Designed primarily for application as a high- power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 Volt, 30 MHz Characteristics
- Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40%
- Intermodulation Distortion @ 100 W (PEP)
- IMD =
- 30 dB (Min)
- 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
100 W (PEP), 30 MHz RF POWER TRANSISTORS NPN SILICON
CASE 211- 11, STYLE 1
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Withstand Current
- 10 s Total Device Dissipation...
